A novel photovoltaic nanodevice based on the co-integration of silicon micro and nanowires prepared

2009 IEEE International Electron Devices Meeting (IEDM) 11207493

https://doi.org/10.1109/IEDM.2009.5424298

Han-Don Um, Jin-Young Jung, Xiaopeng Li, Sang-Won Jee, Kwang-Tae Park, Hong-Seok Seo, Syed Abdul Moiz, Sang-Wook Lee, Jong-Yeoul Ji, Chung Tae Kim, Moon Seop Hyun, Yun Chang Park, Jun Mo Yang, and Jung-Ho Lee

Abstract

Periodically patterned co-integration of silicon microwires (MWs) and nanowires (NWs) were applied for a novel photovoltaic (PV) nanodevice. The optical improvement due to antireflection enhancement with a graded-refractive-index (GRI) effect was observed by employing the cone-shaped NWs. Si MWs that form a radial p-n junction were located in between the dense array of Si NWs. These wire arrays were cost-effectively defined by metal-assisted electroless wet etching. Heavily doped, thin n-type shells which were critically necessary for making the radial p-n junctions were found to be very effective in case of using the sequential process of spin-on-doping (SOD) and plasma ion doping (PID). The co-integrated nanostructure of Si NWs and MWs demonstrated a high short circuit current and cell conversion efficiency (CE) compared to a sole array of Si NWs or MWs. Highest values of short circuit current and CE at 1.5AM illumination were recorded as 24.89 mA/cm2 and 8.45%, respectively, which have been the champion data reported to date in wired PV cells.