Degradation Mechanism of Al2O3 Passivationin Nanostructured Si Solar Cells

Advanced Materials Interfaces 1(5) 1400010

https://doi.org/10.1002/admi.201400010

Jae-Won Song , Jin-Young Jung , Han-Don Um , Xiaopeng Li , Min-Joon Park , Yoon-Ho Nam , Sun-Mi Shin , Tae Joo Park , * Ralf B. Wehrspohn , * and Jung-Ho Lee *

Graphical Abstract

The degradation mechanism of Al2O3 passivation on nanostructured Si is resolved by separate considerations of interface state density and fixed charge density at the interface of Al2O3/Si. Using the analysis of surface potentials, it is reported for the first time that the positive interface charges seriously deteriorate the field-effect passivation of Al2O3 on a nanostructured surface.