Effect of Selective Oxidation Conditions on Defect Generation in Gate Oxide

Japanese Journal of Applied Physics 43(4B) 1825-1828

https://doi.org/10.1143/JJAP.43.1825

Heung-Jae CHO, Kwan-Yong LIM, Se-Aug JANG, Jung-Ho LEE, Jae-Geun OH, Yong Soo KIM, Hong-Seon YANG and Hyun-Chul SOHN

Abstract

We studied the effect of selective oxidation conditions on gate oxide characteristics. Selective oxidation in hydrogen-rich wet ambient at 850°C–950°C was found to generate defects both at the SiO2/Si interface and in oxide bulk, resulting in a higher stress-induced leakage current. The degradation of the device can be explained by the incorporation of hydrogen into the gate oxide during a high-temperature selective oxidation process. The plasma reoxidation process induced fewer defects due to radical oxidation at low temperature.