Fabrication of Truncated Silicon Pyramid Arrays by Electrochemical Etching

Electrochemical and Solid-State Letters 12(12) D89

https://doi.org/10.1149/1.3231135

Hong-Seok Seo, Xiaopeng Li, Han-Don Um, Bongyoung Yoo, Yong Woo Cho and Jung-Ho Lee

Abstract

A periodically ordered, truncated pyramid array of single crystal silicon was readily fabricated by simple electrochemical etching of a pre-patterned silicon wafer. At potentials higher than the current peak (ips), two reactions based on direct and indirect dissolutions of silicon occurred, which induced topological variation of a surface profile, resulting in truncated silicon pyramid structures. The morphology of the silicon pyramids were precisely controlled by the electrochemical etching time and the applied voltage from flat top to sharp tip. The simple processing, flexibility, cost-effectiveness, and unique pyramid texturing make the silicon array promising for application to optoelectronic devices.